收藏本站
NTD70N03R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V GS = 0 V dc , I D = 250 m A dc )
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 V dc , V GS = 0 V dc )
(V DS = 20 V dc , V GS = 0 V dc , T J = 150 ° C)
Gate-Body Leakage Current
(V GS = ± 20 V dc , V DS = 0 V dc )
V (br)DSS
I DSS
I GSS
25
-
-
-
-
28
20.5
-
-
-
-
-
1.5
10
± 100
V dc
mV/ ° C
m A dc
nA dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m A dc )
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
-
1.5
4.0
2.0
-
V dc
mV/ ° C
Static Drain-to-Source On-Resistance (Note 3)
R DS(on)
m W
(V GS = 4.5 V dc , I D = 20 A dc )
(V GS = 10 V dc , I D = 20 A dc )
Forward Transconductance (Note 3)
(V DS = 10 V dc , I D = 15 A dc )
g FS
-
-
-
8.1
5.6
27
13
8.0
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C ISS
-
1333
-
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 V dc , V GS = 0 V,
f = 1 MHz)
C OSS
C RSS
-
-
600
218
-
-
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(on)
-
6.9
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
(V GS = 10 V dc , V DD = 10 V dc ,
I D = 36 A dc , R G = 3 W )
t r
t d(off)
t f
-
-
-
1.3
18.4
5.5
-
-
-
Gate Charge
(V GS = 5 V dc , I D = 36 A dc ,
V DS = 10 V dc ) (Note 3)
Q T
Q GS
Q DS
-
-
-
13.2
3.3
6.5
-
-
-
nC
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Stored
(I S = 20 A dc , V GS = 0 V dc ) (Note 3)
(I S = 20 A dc , V GS = 0 V dc , T J = 125 ° C)
(I S = 36 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
-
-
-
-
-
-
0.86
0.73
27.9
14.8
13.1
19
1.2
-
-
-
-
-
V dc
ns
nC
Charge
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD78N03T4G MOSFET N-CHAN 25V 78A DPAK
NTD80N02-1G MOSFET N-CH 24V 80A IPAK
NTD85N02R-001 MOSFET N-CH 24V 12A IPAK
NTD95N02RT4G MOSFET N-CH 24V 12A DPAK
NTDV18N06LT4G MOSFET N-CH 60V 18A DPAK
NTDV20N06T4G MOSFET N-CH 60V 20A DPAK
NTDV3055L104-1G MOSFET N-CH 60V 12A IPAK
NTDV5804NT4G MOSFET N-CH 40V 69A DPAK
相关代理商/技术参数
NTD70N03RG 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD70N03RT4 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD70N03RT4G 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N03 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N03-001 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N03-035 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N031 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK
NTD78N031G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK